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Euv

Euv news and technical articles from Laser Focus World. Search Euv latest and archived news and articles

  1. NIST measures contamination of EUV lithography optics due to outgassing

    Article

    Sat, 10 Dec 2011

    a clean multilayer surface (left) when EUV photons react with gases (center), resulting ..... that cause contamination of extreme-UV ( EUV ) lithography optics, researchers at the ..... and eliminate chemical contaminants on an EUV scanner’s Bragg-reflector focusing mirrors

  2. HIGH-HARMONIC GENERATION: New EUV source is compact

    Article

    Fri, 1 Aug 2008

    Because extreme-ultraviolet ( EUV ) radiation is so difficult to produce, any ..... who happens to come up with a good idea using EUV light is soon confronted with the complexity and large size of EUV sources. If such a source could be shrunk

  1. Cymer and ASML ship first EUV source that could extend Moore's law ten more years

    Article

    Tue, 14 Jul 2009

    produced plasma (LPP) extreme ultraviolet ( EUV ) lithography source to ASML. The companies say that EUV will support Moore's Law--the trend toward ..... collector mirrors enable next-generation EUV lithography "). Cymer's EUV source, the

  2. EUV -source power rises

    Article

    Tue, 23 Nov 2004

    power for use in extreme-ultraviolet ( EUV ) lithography has increased significantly ..... learned here at the Sematech-sponsored EUV Source Workshop, held during the Third International Symposium on EUV Lithography (EUVL) earlier this month

  3. WIPO PUBLISHES PATENT OF CYMER FOR "METHOD FOR LPP DRIVE LASER OUTPUT DURING EUV NON-OUTPUT PERIODS" (AMERICAN INVENTORS)

    Web

    Mon, 23 Apr 2012

    Publication No. WO/2012/050685 was published on April 19. Title of the invention: "METHOD FOR LPP DRIVE LASER OUTPUT DURING EUV NON-OUTPUT PERIODS." Applicants: CYMER, INC. (US). Inventors: William N. Partlo (US), Richard L. Sandstrom

  4. Laser-produced plasma presents most viable route to EUV lithography

    Print

    Tue, 1 May 2007

    development of extreme-ultraviolet ( EUV ) lithography sources continues at accelerated ..... 2009. The availability of a high-power EUV source for 13.5 nm radiation has been ..... development to enable the realization of EUV lithography. Photoresist performance parameters

  5. EUVA consortium develops 104 Watt LPP light source for EUV lithography

    Article

    Mon, 26 Apr 2010

    announced that its extreme ultraviolet ( EUV ) light source achieved a power output of ..... produced plasma (LPP) light sources for EUV lithography tools since 2002 and proposed ..... production applications (see related story " EUV mirror shows near-zero reflectance at

  6. IMEC, ASML collaborate on EUV lithography program

    Article

    Mon, 1 Nov 2004

    of a full-field extreme ultraviolet ( EUV ) pre-production tool, to be installed ..... An IMEC Industrial Affiliation Program on EUV lithography will begin in early 2006 and ..... 32-nm node and beyond. To ensure that EUV technology is ready when the transition

  7. A plus and a minus for EUV litho research

    Article

    Wed, 25 Jun 2008

    that the dose of extreme-ultraviolet ( EUV ) light required to expose a semiconductor ..... from argon fluoride excimer lasers. But EUV lithography, still in the R&D stage ..... implications for future manufacturing. If EUV photoresists are twice as sensitive as previously

  8. Intel and Corning enter joint development agreement for EUV photomask substrates

    Article

    Fri, 8 Jul 2005

    substrates required for extreme ultraviolet ( EUV ) lithography technology. These substrates are needed to develop low-defect EUV photomasks to enable 32-nm node high-volume production using EUV lithography. Intel's leading position in advanced