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Apd news and technical articles from Laser Focus World. Search Apd latest and archived news and articles

  1. InAs electron APDs exceed conventional gain-bandwidth product limits

    Article

    Tue, 6 Dec 2011

    Electron avalanche photodiodes (e- APDs ) are a new class of avalanche ..... impulse response duration for an e- APD —equal to the sum of the electron ..... operational gain, meaning that e- APDs (unlike conventional APDs ) should not be restricted by a

  2. AVALANCHE PHOTODIODES: Geiger-mode APDs get more channels

    Article

    Wed, 1 Jun 2011

    mechanism is needed to maintain constant output. As in silicon APDs , the breakdown voltage shifts up at higher temperatures. For the MPPC ..... 2541v1 (Aug. 19, 2008). 7. “Characteristics and Use of Si APD ,” technote from Hamamatsu Photonics K.K. 8. K. Yamamura

  1. AVALANCHE PHOTODIODES: Geiger-mode APDs get more channels

    Print

    Wed, 1 Jun 2011

    mechanism is needed to maintain constant output. As in silicon APDs , the breakdown voltage shifts up at higher temperatures. For the MPPC ..... 2541v1 (Aug. 19, 2008). 7. “Characteristics and Use of Si APD ,” technote from Hamamatsu Photonics K.K. 8. K. Yamamura

  2. Negative photoconductance boosts APD frequency response

    Print

    Wed, 1 Oct 2003

    gains, avalanche photodiodes ( APDs ) are used for high-speed optical ..... the Gbit/s range. Ordinary APDs are limited in frequency response ..... negative photoconductance in an APD shows itself as a negatively ..... researchers constructed several APDs with mesas ranging in size from

  3. PHOTODETECTOR: Si charge avalanche enhances APD sensitivity beyond 100 GHz

    Article

    Sun, 1 Aug 2010

    applications requiring high sensitivity. As the APD name suggests, an avalanche of charge occurs ..... fold or greater signal amplification. Our APD detector design features a separate-absorption ..... characteristics are shown for a waveguided Ge/Si APD (b). Due to the impact ionization process

  4. AVALANCHE PHOTODIODES: Si charge avalanche enhances APD sensitivity beyond 100 GHz

    Print

    Sun, 1 Aug 2010

    applications requiring high sensitivity. As the APD name suggests, an avalanche of charge occurs ..... fold or greater signal amplification. Our APD detector design features a separate-absorption ..... characteristics are shown for a waveguided Ge/Si APD (b). Due to the impact ionization process

  5. Long-wavelength APDs show record high gain and efficiency

    Print

    Thu, 1 Nov 2007

    arsenide/gallium indium arsenide APDs have multiplication gains as high ..... The single-photon-counting APDs are free of after-pulse artifacts ..... gigahertz repetition rate. Based on APD production technologies, the APDs have excess noise factors as low

  6. Impact-ionization engineering improves APDs

    Print

    Fri, 1 Nov 2002

    engineering (I2E) of APD materials, however, has enabled the fabrication of APDs with noise levels lower ..... And substitution of new APD materials has allowed ..... has provided them with APD multiplication noise levels ..... standard for low-noise APDs (see Fig. 2). A lower

  7. APDs fit demanding aerospace applications

    Print

    Fri, 1 Aug 2003

    finders that incorporate APD detectors for more sensitive ..... are other common uses for APDs . A silicon APD can detect alpha particles ..... clouds. High-performance APDs can be tailored to meet ..... performance (see "Optimizing APD gain," p. 119). GLAS

  8. AVALANCHE PHOTODIODES: Near-IR APDs expand photon-counting applications

    Print

    Tue, 1 Aug 2006

    needed, InGaAs/InP APDs must be operated in the ..... mode. In this mode, the APD is DC-biased to give a modest ..... photodiodes The InGaAs/InP APD designed specifically ..... Fig. 1) is based on APD chips that are similar ..... to telecommunications APDs , but modified for the